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MT29F64G08CBAAAWP-Z:A123
  • Manufacturer No:
    MT29F64G08CBAAAWP-Z:A
  • Manufacturer:
  • Category:
    Memory
  • Datasheet:
  • SKU:
    3921141
  • Description:
    Obsolete 2008 DUAL Non-Volatile ic memory 0C~70C TA 2.7V 68719476736bit 12mm
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MT29F64G08CBAAAWP-Z:A
  • Manufacturer No:
    MT29F64G08CBAAAWP-Z:A
  • Manufacturer:
    Micron Technology Inc.
  • Category:
    Memory
  • Datasheet:
    MT29F64G08CBAAAWP-Z:A
  • SKU:
    3921141
  • Description:
    Obsolete 2008 DUAL Non-Volatile ic memory 0C~70C TA 2.7V 68719476736bit 12mm

MT29F64G08CBAAAWP-Z:A Details

Obsolete 2008 DUAL Non-Volatile ic memory 0C~70C TA 2.7V 68719476736bit 12mm

MT29F64G08CBAAAWP-Z:A Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Functions: 1
  • Surface Mount: YES
  • Part Status: Obsolete
  • Terminal Position: DUAL
  • Supply Voltage: 3.3V
  • Peak Reflow Temperature (Cel): 260
  • Factory Lead Time: 4 Weeks
  • Time@Peak Reflow Temperature-Max (s): 30
  • Terminal Pitch: 0.5mm
  • Number of Terminations: 48
  • Pin Count: 48
  • Supply Voltage-Min (Vsup): 2.7V
  • Memory Interface: Parallel
  • Operating Temperature: 0°C~70°C TA
  • Width: 12mm
  • Operating Mode: ASYNCHRONOUS
  • Length: 18.4mm
  • ECCN Code: 3A991.B.1.A
  • Memory Size: 64Gb 8G x 8
  • Memory Density: 68719476736 bit
  • Mounting Type: Surface Mount
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Memory Width: 8
  • Packaging: Tube
  • Operating Supply Voltage: 3.3V
  • Terminal Finish: Matte Tin (Sn)
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Published: 2008
  • Memory Format: FLASH
  • Number of Pins: 48
  • Supply Voltage-Max (Vsup): 3.6V
  • Programming Voltage: 2.7V
  • Height Seated (Max): 1.2mm
  • Memory Type: Non-Volatile
  • Voltage - Supply: 2.7V~3.6V
  • HTS Code: 8542.32.00.51
  • Technology: FLASH - NAND
  • Package / Case: 48-TFSOP (0.724, 18.40mm Width)
  • Organization: 8GX8

Micron Technology Inc. — Manufacturer Introduction

Micron Technology Inc.
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

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